Learn how Wolfspeed’s SiC MOSFET clamped inductive load (CIL) test system can help you accurately model your design.

Wolfspeed has launched a base-plate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum.

C3M0025065J1: Silicon Carbide Power MOSFET C3M™ MOSFET Technology N-Channel Enhancement Mode

Wolfspeed extends its SiC technology leadership with the introduction of 3rd-Generation 650V MOSFETs, enabling smaller, lighter and highly-efficient power conversion in an even wider range of power systems.

Offering includes discrete transistors, impedance-matched FETs and multistage MMIC amplifiers

5G represents the next evolutionary step in wireless telecommunications infrastructure and is poised to deliver dramatic improvements in capacity, bandwidth, and latency.

This white paper highlights Wolfspeed’s wide SiC portfolio suited for many different applications, available web-based tools to quickly help customers evaluate parts for their systems.

With many power designers focusing on silicon carbide device level qualification, reliability and consistency of supply, we delve into how Wolfspeed emphasizes the differences between reliability versus qualification testing.

In this Tech Chat we tackle the question often asked on how Silicon Carbide (SiC) compares versus competing technologies.

In this Tech Chat, we discuss the different gate drive levels of Wolfspeed Gen3 SiC MOSFETs – how adding negative gate bias improves noise immunity.