The MSC035SMA170S device is a 1700 V, 35 mΩ SiC MOSFET in a TO-268 (D3PAK) package.

The ATSAMR34J18 is an ultra-low power microcontroller combined with a UHF transceiver communication interface.

In this Tech Chat, we discuss a SiC MOSFET’s threshold voltage and its importance on switching loss and immunity to noise and voltage spikes.

The ATWINC1500-XPRO extension board allows you to evaluate the ATWINC1500 low cost, low power 802.11 b/g/n Wi-Fi network controller module.

What is avalanche and why does it occur? How does it affect reliability of a device?

The MMA042AA is a GaAs MMIC pHEMT distributed amplifier die that operates between 2 GHz and 26 GHz.

Next generation SiC MOSFETs offer superior dynamic and thermal performance over conventional Si MOSFETs and IGBTs.

Microchip’s MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz.

Designers are finally able to extract disruptive system-level benefits of SiC technology to shrink the size, noise, and field failures of auxiliary power units (APUs) in transportation vehicles.

Microchip Technology, working with European Commission consortium member Clean Sky, has developed a family of SiC-based power modules for aerospace applications intended to enable more efficient and compact power conversion and engine drive systems.