Breakthrough Technology Combines High Performance With Low Losses
Silicon Carbide (SiC) semiconductors provide an innovative option for power electronic designers looking for improved system efficiency, smaller form factor and higher operating temperature in products covering industrial, transportation/automotive, medical, aerospace/aviation, defense and communcation market segments. Our next-generation SiC MOSFETs and SiC SBDs are designed with higher repetitive Unclamped Inductive Switching (UIS) capability at rated on-resistance or current. Our SiC MOSFETs maintain high UIS capability at approximately 10–25 Joules Per Square Centimeter (J/cm2) and robust short circuit protection. Microchip’s SiC Schottky Barrier Diodes (SBDs) are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, our SiC MOSFET and SiC SBD die can be paired together for use in modules. SiC MOSFET and SiC SBD products from Microchip will be qualified to the AEC-Q101 standard.
In Stock: 1200V, 25 mOhm SOT-227 Silicon Carbide MOSFET
This SiC ISOTOP® N-Channel power MOSFET features superior avalanche ruggedness, low capacitances and gate charge and stable operation up to 175⁰ C.
Microchip Electronic Fuse (E-Fuse) Demonstrator
You can use high-voltage auxiliary E-Fuse technology in Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) applications.
SiC in Stock: 1200V, 25mΩ SiC MOSFET in SOT-227 Package – Samples Available
Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs.