Breakthrough Technology Combines High Performance With Low Losses
Silicon Carbide (SiC) semiconductors provide an innovative option for power electronic designers looking for improved system efficiency, smaller form factor and higher operating temperature in products covering industrial, transportation/automotive, medical, aerospace/aviation, defense and communcation market segments. Our next-generation SiC MOSFETs and SiC SBDs are designed with higher repetitive Unclamped Inductive Switching (UIS) capability at rated on-resistance or current. Our SiC MOSFETs maintain high UIS capability at approximately 10–25 Joules Per Square Centimeter (J/cm2) and robust short circuit protection. Microchip’s SiC Schottky Barrier Diodes (SBDs) are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, our SiC MOSFET and SiC SBD die can be paired together for use in modules. SiC MOSFET and SiC SBD products from Microchip will be qualified to the AEC-Q101 standard.
With Microchip’s SiC digital gate drivers, users experience reduced switching losses and improved system density.
Microchip accelerated Silicon Carbide (SiC) development kits include the hardware and software elements required to optimize the performance of SiC modules and systems.