UMS’ GaN product portfolio provides excellent SWaP (size, weight, and power) to meet a wide variety of amplifier and frond-end module requirements for SATCOM and ADEF.

Devices deliver high power, high PAE and high linearity in a range of power levels

Richardson RFPD inventories and supports a broad portfolio of RF transmit devices from the leading manufacturers.

Offered in die and plastic QFN packaging, UMS GaN-on-SiC MMIC power amplifiers are available in a variety of power levels to support Ka-band SATCOM uplink and 5G FR2 bands…

Versatile CHA8612-QDB GaN on SiC MMIC in QFN package

CHC6054-QQA module with transmit/receive paths and transmit/receive switch

The CHC6054-QQA Front-End Module contains a power amplifier, driver amplifier, low noise amplifier, and switch, as well as biasing elements.

The CHA8612-QDB is a X-Band 7.9-11GHz new HPA designed by UMS to serve commercial and defense communications systems and radar applications.

Includes devices from leading suppliers

CHA8312-99F features 17 W output power and PAE of 50 percent