Optimized for wideband operation up to 2700 MHz, includes input matching for extended bandwidth performance

Orderable reference design for A3G26D055N 55 W peak GaN discrete transistor

The new MMRF5018HSR5 wideband RF 125 W CW power transistor is for optimized wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance.

In the defense industry, communication is not just necessary it’s a lifeline. NXP’s RF transistors are proven rugged and reliable in the harshest of environments.

The A3G26D055N-100 circuit optimizes the device from 100-2500MHz band, with 12W CW and 11dB gain by utilizing half of the device.

NXP is powering the 5G Access Edge which includes the critical infrastructure equipment between the 5G core and the end-user.

NXP’s Rx Modules are integrated multi-chip modules designed for TD-LTE and 5G mMIMO applications.

RapidRF Front End Designs are ease-of-use solutions to help accelerate prototyping for massive MIMO systems, Open RAN, outdoor small cells, and low power remote radio heads.

As 5G networks continue to be built out across the globe, MNOs are increasingly leveraging 32T32R solutions to improve massive MIMO coverage in less dense urban and suburban areas.

This paper reviews the different RF power semiconductor device types, their differentiating features and some examples.